File:High Electron MobilityTransistor - electron energy band structure (DE).svg

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High_Electron_MobilityTransistor_-_electron_energy_band_structure_(DE).svg‎ (SVG file, nominally 480 × 370 pixels, file size: 28 KB)

[edit] Summary

Description
English: Electron energy band structure of a high electron mobility transistor (HEMT) as cross section under the gate electrode
Deutsch: Energiebandstruktur eines "High electron mobility"-Transistor (HEMT), dargestellt ist der Verlauf unter der Gate-Elektrode
Date

17 June 2008(2008-06-17)
Source

Own work
Author

Cepheiden
Permission
(Reusing this image)		 See below.
Other versions

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image:HighElectronMobilityTrasistor_Band_Image.PNG

according to D. J. Widiger, I.C. Kizilyalli, K. Hess, J.J. Coleman: Two-dimensional transient simulation of an idealized high electron mobility transistor. in: Electron Devices, IEEE Transactions on. Vol. 32 Issue 6, 1985, pp. 1092-1102

[edit] Licensing

Public domain I, the copyright holder of this work, hereby release it into the public domain. This applies worldwide.

In case this is not legally possible:
I grant anyone the right to use this work for any purpose, without any conditions, unless such conditions are required by law.

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Date/TimeThumbnailDimensionsUserComment
current11:17, 17 June 2008Thumbnail for version as of 11:17, 17 June 2008480×370 (28 KB)Cepheiden (talk | contribs) ({{Information |Description={{en|1=Electron energy band structure of a high electron mobility transistor (HEMT) as cross section under the gate electrode }} {{de|1=Energiebandstruktur eines "High electron mobility"-Transistor (HEMT), dargestellt ist der Ve)

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