File:Locos (microtechnology) process recessed.svg
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_process_recessed.svg&action=edit§ion=1){kind=link}
| Description |
English: The image illustrates the LOCOS technology used in microfabrication mostly to create isolating structures.
I. Preparation of silicon substrate II. CVD deposition of SiO2, pad/buffer oxide III. CVD deposition of Si3N4, nitride mask IV. Etching of nitride layer and silicon oxide layer V. Silicon etch VI. Thermal growth of silicon oxide VII. Furhter growth of thermal silicon oxide VIII. Removal of nitride mask 1) Si, silicon substrate 2) SiO2, pad/buffer oxide, chemical vapor deposition silicon oxide 3) Si3N4, nitride mask 4) SiO2, isolation oxide, thermal oxide |
| Date | |
| Source | Own work |
| Author | Twisp |
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I, the copyright holder of this work, release this work into the public domain. This applies worldwide. In some countries this may not be legally possible; if so: I grant anyone the right to use this work for any purpose, without any conditions, unless such conditions are required by law. |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 19:08, 14 December 2009 | | 512 × 929 (31 KB) | Cepheiden (talk | contribs) | some fixes |
| 20:24, 19 January 2008 |  | 625 × 1,169 (64 KB) | Twisp (talk | contribs) | {{Information |Description= {{en|The image illustrates the LOCOS technology used in microfabrication mostly to create isolating structures. I. Preparation of silicon substrate II. CVD deposition of SiO2, pad/buffer oxide III. CVD deposition of Si3N4, ni |
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