Category:Doping (semiconductor)
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intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties | ||||
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Media in category "Doping (semiconductor)"
The following 13 files are in this category, out of 13 total.
Centrotherm diffusion furnace at LAAS 0489.jpg 2,592 × 3,872; 3.85 MB
Centrotherm diffusion furnace at LAAS 0491.jpg 2,592 × 3,872; 3.78 MB
Centrotherm diffusion furnace at LAAS 0493.jpg 2,592 × 3,872; 4 MB
Centrotherm diffusion furnaces at LAAS 0481.jpg 2,592 × 3,872; 4.22 MB
N-doped Si.svg 211 × 169; 25 KB
Niveau accepteur.svg 650 × 350; 20 KB
Niveau donneur.svg 650 × 350; 20 KB
P-doped Si.svg 211 × 169; 25 KB
Pasma domieszkowe.svg 318 × 256; 12 KB
Schema - n-dotiertes Silicium.svg 775 × 775; 111 KB
Schema - p-dotiertes Silicium.svg 775 × 775; 106 KB
Semiconductor conductivity vs T.png 1,183 × 872; 25 KB
Semiconductor-doping.jpg 2,033 × 2,200; 1.28 MB
