File:Diode mosfet-ru.svg

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English: Current vs Voltage curves of a MOSFET operating in the ohmic region and a diode. At low current values, the voltage drop in the MOSFET is less than in the diode (due to its threshold voltage). When the current increases, the forward voltage drop of the diode does not increase as much as that of the MOSFET. In consequence, for high currents, the losses (current times voltage) are less in the diode than in the MOSFET. However, by connecting several MOSFETs in parallel, it is possible to reduce their RDSon as can be seen in the figure (magenta curve). Paralleling several diodes will not modify their threshold voltage.
Русский: Зависимости тока от напряжения для полевого МОП-транзистора, работающего в омической области, и диода. При малых значениях тока падение напряжения на MOSFET меньше, чем на диоде (из-за его прямого падения напряжения). Когда ток увеличивается, прямое падение напряжения на диоде не увеличивается так быстро, как на MOSFET. Как следствие, для больших токов потери (ток, умноженный на напряжение) в диоде меньше, чем в MOSFET. Однако, подключив несколько полевых МОП-транзисторов параллельно, можно уменьшить их сопротивление во включённом состоянии, как показано на рисунке (пурпурная кривая). Параллельное соединение нескольких диодов не изменит их пороговое напряжение и выигрыш в рассеиваемой мощности будет незначительным.
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Source File:Diode mosfet.svg by User:CyrilB
Author Д.Ильин: translation
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