File:Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide (Figure 2).png
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(2a) Schematic diagram of the single-photon electroluminescence process. (2b) Illustration of the electron capture process.
Summary[edit]
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| Description |
English: (2a) Schematic diagram of the single-photon electroluminescence process for the SiC-SF defect in 4H-SiC. |e0>, |g0>, |s0> denote the excited, ground, and shelving states of the neutral SiC-SF center, respectively. |g+> is the only (ground) state of the positively charged SiC-SF center. Arrows indicate transitions among different states of the color center. Transition rates are shown next to each arrow. (2b) Illustration of the electron capture process by the positively charged color center. rT is the Thomson radius |
| Date | |
| Source |
Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide |
| Author | Igor A. Khramtsov, Andrey A. Vyshnevyy, Dmitry Yu. Fedyanin |
Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russian Federation
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