File:LOCOS process DE.svg

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English: (originally) LOCOS process for isolating structures in semiconductor technology

1.-3. layer stack deposition (SiO2, Si3N4, photo resist) 4. opening oxidation window 5. thermal oxidation of Silicon with increasing volume

6. back etch of SiO2 and removal of nitride mask
Deutsch: (ursprünglicher) LOCOS-Prozess für die Herstellung von Isolationsstrukturen in der Halbleitertechnik

1.-3. Abscheidung des Schichtstapels (SiO2, Si3N4, Fotoresist) 4. Öffnung des Oxidationsfensters 5. Thermische Oxidation von Silicium mit Volumenzunahme

6. Rückätzen von SiO2 und Entfernung der Nitridmaske
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Source Own work
Author Cepheiden

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current21:41, 1 February 2009Thumbnail for version as of 21:41, 1 February 2009768 × 600 (20 KB)Cepheiden (talk | contribs){{Information |Description={{en|1=(originally) LOCOS process for isolating structures in semiconductor technology 1.-3. layer stack deposition (SiO2, Si3N4, photo resist) 4. opening oxidation window 5. thermal oxidation of Silicon with increasing volume

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