File:NPN BJT voltage-divider-bais re model in high frequencies.svg

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العربية: نمذجة ترانزستور ثنائي القطب إن بي إن بوصلة الباعث المشترك في حالة الترددات المرتفعة من أجل دارة التحييز بمقسم الجهد بواسطة نموذج آر إي، ويظهر أثر المكثفات الطفيلية في دارتي الدخل والخرج
English: Modeling of an NPN BJT in a common emitter configuration when high frequencies are used, for the voltage-divider-bias circuit using re model, parasitic capacitances can be seen both in the input and output sides.
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Michel Bakni  (1989–)  wikidata:Q81411358
 
Michel Bakni
Description Syrian university teacher and committee member
Doctor in electronics and draftmaker
Date of birth 1989 Edit this at Wikidata
Location of birth Latakia
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creator QS:P170,Q81411358

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current18:47, 24 March 2019Thumbnail for version as of 18:47, 24 March 2019555 × 170 (110 KB)Michel Bakni (talk | contribs)Th1 > Thi and Th2 > Tho
15:21, 24 March 2019Thumbnail for version as of 15:21, 24 March 2019555 × 170 (110 KB)Michel Bakni (talk | contribs)User created page with UploadWizard

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