File:MOVPEofEPINW.jpg
MOVPEofEPINW.jpg (656 × 261 pixels, file size: 60 KB, MIME type: image/jpeg)
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Summary
[edit]- Figure Caption: Low pressure metal organic vapor phase epitaxy (MOVPE) can be used to grow III-V nanowires epitaxially on suitable crystalline substrates, sucha s III-V materials or silicon with a reasonably matching lattice constant.
Nanowire growth is catalyzed by various nanoparticles, which are deposited on the substrate surface, typically gold nanoparticles with a diameter of 20-100nm.
- This illustration was made for the Opensource Handbook of Nanoscience and Nanotechnology
- Please acknowledge the Opensource Handbook of Nanoscience and Nanotechnology if you use this illustration!
- The image also appears on the Commons/nanotechnology page
- Illustration by Kristian Molhave
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 00:41, 20 November 2006 | ![]() | 656 × 261 (60 KB) | KristianMolhave (talk | contribs) | |
00:24, 20 November 2006 | ![]() | 272 × 856 (62 KB) | KristianMolhave (talk | contribs) | *Figure Caption: Low pressure metal organic vapor phase epitaxy (MOVPE) can be used to grow III-V nanowires epitaxially on suitable crystalline substrates, sucha s III-V materials or silicon with a reasonably matching lattice constant. Nanowire growth is |
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