File:Scheme of n-metal oxide semiconductor field-effect transistor with channel de.svg
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[edit]DescriptionScheme of n-metal oxide semiconductor field-effect transistor with channel de.svg |
English: Lateral cut of a metal oxide semiconductor field-effect transistor with the channel. Coloured, with german descriptions
Deutsch: Eingefärbtes Schema eines n-Kanal w:de:MOSFET. Die Anschlüsse sind:
Mit steigender Spannung zwischen Gate und Bulk bzw. Substrat (hier rot dargestellt) werden dabei zuerst die Majoritätsladungsträger verdrängt und es bildet sich durch Ladungsträger-Verarmung ein nichtleitendes Gebiet. Steigt die Spannung weiter, kommt es zur Inversion, das p-dotierte Substrat wird unterhalb des Gates n-leitend und bildet einen leitenden Kanal zwischen Source und Drain. ('+' bedeutet in dieser Abbildung starke Dotierung.) |
Date | |
Source | Own work |
Author | Arne Nordmann (norro} |
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 19:10, 3 May 2006 | 625 × 400 (27 KB) | Norro (talk | contribs) | small mistake | |
19:00, 3 May 2006 | 625 × 400 (27 KB) | Norro (talk | contribs) | Seems like Batik is not able to render arrows yet, so drew them by myself | ||
18:56, 3 May 2006 | 625 × 400 (27 KB) | Norro (talk | contribs) | revised | ||
20:09, 2 May 2006 | 625 × 525 (30 KB) | Norro (talk | contribs) | improved | ||
21:31, 1 May 2006 | 525 × 438 (29 KB) | Norro (talk | contribs) | improved | ||
20:53, 1 May 2006 | 525 × 438 (28 KB) | Norro (talk | contribs) | added depletion zone | ||
20:28, 1 May 2006 | 563 × 438 (23 KB) | Norro (talk | contribs) | Scheme of n-MOSFET with channel, german descriptions |
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